Photo- and electroluminescence in the 1.3-μm wavelength range from quantum-dot structures grown on GaAs substrates

被引：25

作者：

Zhukov, AE ^{[1
]}

Kovsh, AR ^{[1
]}

Egorov, AY ^{[1
]}

Maleev, NA ^{[1
]}

Ustinov, VM ^{[1
]}

Volovik, BV ^{[1
]}

Maksimov, MV ^{[1
]}

Tsatsul'nikov, AF ^{[1
]}

Ledentsov, NN ^{[1
]}

Shernyakov, YM ^{[1
]}

Lunev, AV ^{[1
]}

Musikhin, YG ^{[1
]}

Bert, NA ^{[1
]}

Kop'ev, PS ^{[1
]}

Alferov, ZI ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 1999年 / 33卷 / 02期

关键词：

D O I：

10.1134/1.1187662

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A method is proposed to increase the emission wavelength from structures grown on GaAs substrates by inserting a strained InAs quantum dot array into an external InGaAs quantum well. The dependence of the luminescence peak position on the active region design was investigated for structures grown by this method. Room-temperature photo- and electroluminescence spectra in the 1.3-mu m wavelength range are compared. (C) 1999 American Institute of Physics. [S1063-7826(99)00602-X].

引用

页码：153 / 156

页数：4

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