Bulk Cr tips for scanning tunneling microscopy and spin-polarized scanning tunneling microscopy

被引：31
|
作者：
Li Bassi, A.
Casari, C. S.
Cattaneo, D.
Donati, F.
Foglio, S.
Passoni, M.
Bottani, C. E.
Biagioni, P.
Brambilla, A.
Finazzi, M.
Ciccacci, F.
Duo, L.
机构：
[1] Politecn Milan, Dipartimento Ingn Nucl, CNISM, Ctr NanoEngineered MAt & Surfaces, I-20133 Milan, Italy
[2] Politecn Milan, Dipartimento Fis, CNISM, Ctr NanoEngineered MAt & Surfaces, I-20133 Milan, Italy
来源：
APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 17期
关键词：
D O I：
10.1063/1.2800810
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A simple, reliable method for the preparation of bulk Cr tips for scanning tunneling microscopy (STM) is proposed and its potentialities in performing high-quality and high-resolution STM and spin-polarized STM (SP-STM) are investigated. Cr tips show atomic resolution on ordered surfaces. Contrary to what happens with conventional W tips, rest atoms of the Si (111)-7 x 7 reconstruction can be routinely observed, probably due to a different electronic structure of the tip apex. SP-STM measurements of the Cr (001) surface showing magnetic contrast are reported. Our results reveal that the peculiar properties of these tips can be suited in a number of STM experimental situations. (C) 2007 American Institute of Physics.
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页数：3
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