Structural, electrical and optical properties of SnO2 films deposited on Y-stabilized ZrO2 (100) substrates by MOCVD

被引：10
|
作者：
Kong, Lingyi [1 ]
Ma, Jin [1 ]
Zhu, Zhen [1 ]
Luan, Caina [1 ]
Ji, Feng [1 ]
机构：
[1] Shandong Univ, Sch Phys, Jinan 250100, Shandong, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2010年 / 312卷 / 20期
基金：
中国国家自然科学基金;
关键词：
Crystal structure; X-ray diffraction; Metalorganic chemical vapor deposition; Oxides; THIN-FILMS; TIN; NANOWIRES; GROWTH; TIO2; BEAM;
D O I：
10.1016/j.jcrysgro.2010.07.019
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
SnO2 films have been deposited on Y-stabilized ZrO2 (YSZ) (1 0 0) substrates at different substrate temperatures (500-800 degrees C) by metalorganic chemical vapor deposition (MOCVD). Structural, electrical and optical properties of the films have been investigated. The films deposited at 500 and 600 degrees C are epitaxial SnO2 films with orthorhombic columbite structure, and the HRTEM analysis shows a clear epitaxial relationship of columbite SnO2(1 0 0)parallel to YSZ(1 00). The films deposited at 700 and 800 degrees C have mixed-phase structures of rutile and columbite SnO2. The carrier concentration of the films is in the range from 1.15 x 10(19) to 2.68 x 10(19) cm(-3), and the resistivity is from 2.48 x 10(-2) to 1.16 x 10(-2) Omega cm. The absolute average transmittance of the films in the visible range exceeds 90%. The band gap of the obtained SnO2 films is about 3.75-3.87 eV. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：2931 / 2935
页数：5
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