Resistive switching memory effect of ZrO2 films with Zr+ implanted

被引：183
|
作者：
Liu, Qi [1 ]
Guan, Weihua [1 ]
Long, Shibing [1 ]
Jia, Rui [1 ]
Liu, Ming [1 ]
Chen, Junning [2 ]
机构：
[1] Chinese Acad Sci, Inst Microelect, Lab Nanofabricat & Novel Dev Integrated Technol, Beijing 100029, Peoples R China
[2] Anhui Univ, Coll Elect & Technol, Hefei 230039, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 01期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1063/1.2832660
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The Au/Cr/Zr+-implanted-ZrO2/n(+)-Si sandwiched structure exhibits reversible bipolar resistive switching behavior under dc sweeping voltage. The resistance ratio (R-ratio) of high resistive state and low resistive state is as large as five orders of magnitude with 0.5 V readout bias. Zr+-implanted-ZrO2 films exhibit good retention characteristics and high device yield. The impact of implanted Zr+ ions on resistive switching performances is investigated. Resistive switching of the fabricated structures is explained by trap-controlled space charge limited current conduction. (C) 2008 American Institute of Physics.
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页数：3
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