Enhanced piezoelectric effect in MoS2 and surface-engineered GaN bilayer

被引:2
|
作者
Wang, Xinxin [1 ,2 ,3 ]
Shi, Wenyu [1 ,2 ]
Wan, Jianguo [3 ]
机构
[1] Henan Univ Sci & Technol, Sch Phys & Engn, Luoyang 471023, Peoples R China
[2] Henan Univ Sci & Technol, Henan Key Lab Photoelect Energy Storage Mat & App, Luoyang 471023, Peoples R China
[3] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
关键词
Gallium nitride;
D O I
10.1063/5.0055321
中图分类号
O59 [应用物理学];
学科分类号
摘要
The piezoelectric effect of MoS2 and surface-engineered GaN bilayers is systematically investigated using the density functional perturbation theory based on first-principles calculations. The results show that the piezoelectric coefficients increased in the stacking with same polarization orientation between MoS2 and of surface-engineered GaN monolayers. We further find that the increment extent is also affected by different stacking configurations. Furthermore, the uniaxial and normal strains can effectively modulate the piezoelectric coefficients in a reasonable range. Such variations can be revealed by analyzing the charge distribution at different strain states. Our results show that MoS2 and surface-engineered GaN bilayers have potential applications in nanosensors and piezotronics.
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页数:8
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