Simulation and test of 3D silicon radiation detectors

被引：15
|
作者：
Fleta, C. [1 ]
Pennicard, D.
Bates, R.
Parkes, C.
Pellegrini, G.
Lozano, M.
Wright, V.
Boscardin, M.
Betta, G.-F. Dalla
Piemonte, C.
Pozza, A.
Ronchin, S.
Zorzi, N.
机构：
[1] Univ Glasgow, Dept Phys & Astron, Glasgow, Lanark, Scotland
[2] CSIC, CNM IMB, Ctr Nacl Microelect, Barcelona, Spain
[3] IRST, ITC, I-38050 Trento, Italy
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2007年 / 579卷 / 02期
关键词：
3D detector; silicon detector; simulation;
D O I：
10.1016/j.nima.2007.05.263
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The work presented here is the result of the collaborative effort between the University of Glasgow, ITC-IRST (Trento) and IMB-CNM (Barcelona) in the framework of the CERN-RD50 Collaboration to produce 31) silicon radiation detectors and study their performance. This paper reports on two sets of 3D devices. IRST and CNM have fabricated a set of single-type column 3D detectors, which have columnar electrodes of the same doping type and an ohmic contact located at the backplane. Simulations of the device behaviour and electrical test results are presented. In particular, current-voltage, capacitance-voltage and charge collection efficiency measurements are reported. Other types of structures called double-sided 3D detectors are currently being fabricated at CNM. In these detectors the sets of n and p columns are made on opposite sides of the device. Electrical and technological simulations and first processing results are presented. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：642 / 647
页数：6
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