Spin-polarized electron transport in a NiFe/GaAs Schottky diode

被引：4
|
作者：
Hirohata, A
Xu, YB
Guertler, CM
Bland, JAC
Holmes, SN
机构：
[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England
[2] Toshiba Res Europe Ltd, Cambridge Res Lab, Cambridge CB4 0WE, England
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2001年 / 226卷
基金：
英国工程与自然科学研究理事会;
关键词：
electron-spin polarization; tunneling; interface magnetism; spin injection;
D O I：
10.1016/S0304-8853(00)01061-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Spin transmission across Ni80Fe20/GaAs Schottky barrier interfaces was investigated at room temperature. Circularly polarized light was used to excite electrons with a spin polarization perpendicular to the film plane. An almost constant difference in the helicity-dependent photocurrent was observed at negative bias, attributed to efficient spin filtering at the interface. The photon energy dependence indicates that the asymmetry in the photocurrent vanishes at high energy. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：914 / 916
页数：3
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