Dynamic global model of oxide Czochralski process with weighing control

被引：4
|
作者：
Mamedov, V. M. [1 ]
Vasiliev, M. G. [1 ]
Yuferev, V. S. [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源：
JOURNAL OF CRYSTAL GROWTH | 2011年 / 318卷 / 01期
关键词：
Computer simulation; Heat transfer; Interfaces; Czochralski method; Oxides; Dielectric materials; INTERFACE INVERSION; CRYSTAL-GROWTH; HEAT-TRANSFER; GADOLINIUM GALLIUM; MELT CONVECTION; SIMULATION; FEEDBACK; SHAPE;
D O I：
10.1016/j.jcrysgro.2010.11.108
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
A dynamic model of oxide Czochralski growth with weighing control has been developed for the first time. A time-dependent approach is used for the calculation of temperature fields in different parts of a crystallization set-up and convection patterns in a melt, while internal radiation in crystal is considered in a quasi-steady approximation. A special algorithm is developed for the calculation of displacement of a triple point and simulation of a crystal surface formation. To calculate variations in the heat generation, a model of weighing control with a commonly used PID regulator is applied. As an example, simulation of the growth process of gallium-gadolinium garnet (GGG) crystals starting from the stage of seeding is performed. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：703 / 707
页数：5
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