THE EFFECT OF ZnO REPLACEMENT BY ZnMgO ON ZnO/CdS/Cu(In,Ga)Se2 SOLAR CELLS

被引：0
|
作者：
Li, Jian V. [1 ]
Li, Xiaonan [1 ]
Kanevce, Ana [1 ]
Yan, Yanfa [1 ]
Repins, Ingrid [1 ]
机构：
[1] Natl Ctr Photovolta, Natl Renewable Energy Lab, Golden, CO 80401 USA
来源：
2009 34TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-3 | 2009年
关键词：
PERFORMANCE; INTERFACE; CDS;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
We studied the electrical properties and device performance of the Cu(In,Ga)Se-2 solar cell when i-ZnO is replaced by i-ZnMgO. Admittance spectroscopy reveals a deep level attributed to the i-ZnMgO/CdS interface. The capacitance voltage experiment indicates a pronounced reduction of carrier concentration in the p-CIGS absorber. Inserting a thin i-ZnO layer between i-ZnMgO and CdS completely removes the detrimental effect of the interface states and partially reverts the carrier concentration reduction effect. Device simulations indicate that the open circuit voltage is lowered due to the carrier concentration reduction while the fill factor is sensitive to the defects at the interface.
引用
收藏
页码：86 / 89
页数：4
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