The role of vicinal silicon surfaces in the formation of epitaxial twins during the growth of III-V thin films

被引：24

作者：

Devenyi, G. A. ^{[1
,2
,3
]}

Woo, S. Y. ^{[3
,4
,5
]}

Ghanad-Tavakoli, S. ^{[2
]}

Hughes, R. A. ^{[3
]}

Kleiman, R. N. ^{[1
,2
,3
]}

Botton, G. A. ^{[3
,4
,5
]}

Preston, J. S. ^{[1
,2
,3
]}

机构：

[1] McMaster Univ, Dept Engn Phys, Hamilton, ON L8S 4L7, Canada

[2] McMaster Univ, Ctr Emerging Device Technol, Hamilton, ON L8S 4L7, Canada

[3] McMaster Univ, Brockhouse Inst Mat Res, Hamilton, ON L8S 4M1, Canada

[4] McMaster Univ, Dept Mat Sci & Engn, Hamilton, ON L8S 4L7, Canada

[5] McMaster Univ, Canadian Ctr Electron Microscopy, Hamilton, ON L8S 4M1, Canada

来源：

JOURNAL OF APPLIED PHYSICS | 2011年 / 110卷 / 12期

关键词：

MOLECULAR-BEAM EPITAXY; TRANSMISSION ELECTRON-MICROSCOPY; SI; 001; SUBSTRATE; COMPOUND SEMICONDUCTORS; GAAS; GASB; DISLOCATION; SI(100);

D O I：

10.1063/1.3671022

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We examine the role of vicinal surface steps in the formation and propagation of twins during the growth of epitaxial III-V thin films (GaAs, InP, GaSb, AlSb) on silicon substrates. This is achieved through the combined use of two-dimensional X-ray diffraction and conventional transmission electron microscopy techniques, which allow for both a macro and nano/micro characterization of the material systems. Observed is a systematic suppression of twins formed opposite to the tilt direction of vicinal substrates through a process of step-flow overgrowth of nucleated twins, and an enhancement of twins toward the tilt direction when the fastest growth planes are aligned with the step-flow. These results indicate a probable path to the enhancement of the electronic mobility of lateral devices based on III-V semiconductors on silicon. (C) 2011 American Institute of Physics. [doi:10.1063/1.3671022]

引用

页数：7

共 50 条

[41] GROWTH OF III-V COMPOUNDS ON VICINAL PLANES BY MOLECULAR-BEAM EPITAXY
JOYCE, BA
NEAVE, JH
ZHANG, J
VVEDENSKY, DD
CLARKE, S
HUGILL, KJ
SHITARA, T
MYERSBEAGHTON, AK
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 (12) : 1147 - 1154
[42] Atomistics of III-V semiconductor surfaces: Role of group V pressure
Grosse, F
Barvosa-Carter, W
Zinck, JJ
Gyure, MF
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (03): : 1178 - 1181
[43] Growth of III-V nitride films for optoelectronic devices
Knick, DC
Tomar, MS
Kuenhold, KA
DISORDERED MATERIALS - CURRENT DEVELOPMENTS -, 1996, 223 : 237 - 240
[44] Substrate effects on the formation of flat Ag films on (110) surfaces of III-V compound semiconductors
Chao, KJ
Zhang, ZY
Ebert, P
Shih, CK
PHYSICAL REVIEW B, 1999, 60 (07) : 4988 - 4991
[45] Free Energy of Nucleus Formation during Growth of III-V Semiconductor Nanowires
Dubrovskii, V. G.
Sokolovskii, A. S.
Shtrom, I., V
TECHNICAL PHYSICS LETTERS, 2020, 46 (09) : 889 - 892
[46] To the Understanding of the Formation of the Droplet-epitaxial III-V Based Nanostructures
Nemcsics, Akos
7TH INTERNATIONAL CONFERENCE ON LOW DIMENSIONAL STRUCTURES AND DEVICES (LDSD 2011), 2014, 1598 : 79 - 82
[47] Epitaxial Growth of III-V Semiconductors Using Organometallics and Hydrides.
Hallais, Jean-Philippe
1978, 21 (02): : 129 - 138
[48] Optical characteristics of amorphous III-V nitride thin films
Khoshman, JM
Kordesch, ME
GaN, AIN, InN and Their Alloys, 2005, 831 : 627 - 633
[49] Assessment of NSOM resolution on III-V semiconductor thin films
M. Labardi
P.G. Gucciardi
M. Allegrini
C. Pelosi
Applied Physics A, 1998, 66 : S397 - S402
[50] Lattice-Mismatched Epitaxial Growth On Porous III-V Substrates
Grym, J.
Gladkov, P.
Vanis, J.
Hulicius, E.
Pangrac, J.
Pacherova, O.
Dimitrakopulos, G.
Bazioti, C.
Komninou, Ph.
STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS) 55 -AND- LOW-DIMENSIONAL NANOSCALE ELECTRONIC AND PHOTONIC DEVICES 6, 2013, 58 (08): : 53 - 60

← 1 2 3 4 5 →