Dual-band infrared imaging analyses for 256x256 InAs/GaAs quantum dot infrared photodetector focal plane array

In this work, the 30 stacked InAs/GaAs quantum dot infrared photodetector (QDIP) structure was grown by solid-source molecular beam epitaxy technique and demonstrated with dual-band mid- (2.7 similar to 5.6 mu m) and long(7.5 similar to 13.5 mu m) wavelength normal-incident detections without grating and passivated process for 256x256 FPA. The 256 x 256 QDIP FPA hybridized with snapshot-mode ROIC was mounted in a 68 pin leadless ceramic chip carrier which was put in the testing dewar with IR optical cold spectral filters of the 2.9 similar to 5.5pm and 6.5 similar to 14.5 Vim for the dual-band IR detections, respectively. The testing scheme for thermal imaging uniformity of the InAs/GaAs QDIP focal plane array (FPA) has been proposed and calibrated using a plane-typed blackbody source of a high temperature of 373 +/- 1K and lower ambient temperature for the two-point temperature correction. The averaged of specific detectivity (D) and operability of the QDIP FPA have reached 1.5x10(10)cm-Hz(1/2)/W and 99% at 80K, respectively. The dominant noise equivalent temperature differences (NEDT) of typical figure of merit for QDIP thermal imaging module operated under the temperature of 80K, device biases of -0.7 V and integration time of 32ms with infrared optics and two-point temperature correction (T-L =R.T. and T-H= 200 degrees C) are 1.065 K (mid-wavelength IR) and 13 1 mK (long-wavelength IR), respectively. Meanwhile, it is worth to note that these are the first confirmation for dual-band detections of FPA from direct InAs quantum dots matrix embedded in GaAs heterostructure. In the future, the dual-band IR QDIP FPA will become one of the important candidates for hyper-spectral detection and thermal imaging fusion application.