200 V GaN-on-SOI Smart Power Platform for Monolithic GaN Power ICs

被引：11
|
作者：
Cosnier, T. [1 ]
Syshchyk, O. [1 ,2 ]
De Jaeger, B. [1 ]
Geens, K. [1 ]
Cingu, D. [1 ]
Fabris, Elena [1 ]
Borga, M. [1 ]
Vohra, A. [1 ]
Zhao, M. [1 ]
Bakeroot, B. [1 ,3 ]
Wellekens, D. [1 ]
Magnani, A. [1 ]
Vudumula, P. [2 ]
Chatterjee, U. [1 ]
Langer, R. [1 ]
Decoutere, S. [1 ]
机构：
[1] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
[2] Katholieke Univ Leuven, Dept Elect Engn, Leuven, Belgium
[3] Univ Ghent, Ghent, Belgium
来源：
2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2021年
关键词：
D O I：
10.1109/IEDM19574.2021.9720591
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper demonstrates a 200 V GaN-on-SOI smart power integrated circuits (ICs) platform developped on 200 mm substrates. Depletion-mode (d-mode) MIS-HEMTs and Gated-Edge-Termination Schottky barrier diodes (GET-SBDs) have been successfully integrated in an enhancement-mode (e-mode) HEMT technology baseline. A variety of low-voltage analog/logic devices and passive components further supports the GaN ICs platform. These results significantly contribute to monolithic GaN integration for power ICs and create key opportunities for the development of GaN power circuits and complex converter topologies.
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页数：4
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