Improvement in the electrical properties of a (Ba, Sr)TiO3 capacitor by inserting a TiN layer between polycrystalline Si and Pt bottom electrodes

被引：5
|
作者：
Kim, YT [1 ]
Lee, CW [1 ]
机构：
[1] KOOKMIN UNIV, DEPT PHYS, SONGBUK GU, SEOUL 136702, SOUTH KOREA
来源：
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1996年 / 74卷 / 03期
关键词：
D O I：
10.1080/01418639608243525
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The crystal structure and electrical properties of a (Ba, Sr)TiO3 (BST) film on a polycrystalline Si (poly-Si) Pt electrode were investigated by inserting a Ti or TiN layer between the poly-Si and Pt. On the poly-Si/TiN/Pt bottom electrode, BST has dominantly (111) oriented grains on the (111) oriented Pt electrode and the interface study shows that the TiN prevents effectively the interdiffusion of poly-Si, Pt and BST, resulting in a dielectric constant which is three times the value of 110 for a poly-Si/Ti/Pt/BST/Pt capacitor, and the leakage current behaviour is also significantly improved by the interposition of TiN between the poly-Si and the Pt. These improvements are ascribed to the role of TSI in preventing interfacial defects and oxygen deficiency at the interface of BST and Pt.
引用
收藏
页码：293 / 299
页数：7
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