Reliability Analysis for Power MOSFET Based on Multi-physics Simulation

被引：0
|
作者：
Li, Shuo [1 ]
Wang, Hong [1 ]
Yang, Shiyuan [1 ]
机构：
[1] Tsinghua Univ, Dept Automat, Beijing, Peoples R China
来源：
2015 20TH IEEE EUROPEAN TEST SYMPOSIUM (ETS) | 2015年
关键词：
power MOSFET; prognostic; reliability; simulation;
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Power MOSFET plays an increasingly important role in power electric system and safety critical field. Study on reliability and prognostic method of power MOSFET is critical in ensuring safety. This paper proposes a reliability analysis method for power MOSFET based on multi-physics simulation. Electric - thermal - structure models are studied for the construction of health state dictionary, which records the health working state of online power MOSFET under certain working condition. Base d on the health state dictionary and in-situ monitoring data, a health criterion function is used to evaluate the state of device. The methodology can be served as the bases for further prognostic study and remain useful life prediction.
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页数：2
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