Sensitivity of double-gate and FinFET devices to process variations

We investigate the manufacturability of 20-nm double-gate and FinFET devices in integrated circuits by projecting process tolerances. Two important factors affecting the sensitivity of device electrical parameters to physical variations were quantitatively considered. The quantum effect was computed using the density gradient method and the sensitivity of threshold voltage to random dopant fluctuation was studied by Monte Carlo simulation. Our results show the 3sigma value of V-T variation caused by discrete impurity fluctuation can be greater than 100%. Thus, engineering the work function of gate materials and maintaining a nearly intrinsic channel is more desirable. Based on a design with an intrinsic channel and ideal gate work function, we analyzed the sensitivity of device electrical parameters to several important physical fluctuations such as the variations in gate length, body thickness, and gate dielectric thickness. We found that quantum effects have great impact on the performance of devices. As a result, the device electrical behavior is sensitive to small variations of body thickness. The effect dominates over the effects produced by other physical fluctuations. To achieve a relative variation of electrical parameters comparable to present practice in industry, we face a challenge of fin width control (less than similar to1 nm 3sigma value of variation) for the 20-nm FinFET devices. The constraint of the gate length variation is about 10similar to15%. We estimate a tolerance of 1similar to2 Angstrom 3sigma value of oxide thickness variation and up to 30% front-back oxide thickness mismatch.