Optical properties of undoped and modulation-doped AlxGa1-xN/GaN heterostructures grown by metalorganic chemical vapor deposition

被引：6

作者：

Kwon, HK ^{[1
]}

Eiting, CJ ^{[1
]}

Lambert, DJH ^{[1
]}

Shelton, BS ^{[1
]}

Wong, MM ^{[1
]}

Zhu, TG ^{[1
]}

Dupuis, RD ^{[1
]}

机构：

[1] Univ Texas, Microelect Res Ctr, Austin, TX 78712 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 221卷 / 1-4期

基金：

美国国家科学基金会;

关键词：

heterostructure; two-dimensional electron gas; photoluminescence; AlGaN; GaN; metalorganic chemical vapor deposition;

D O I：

10.1016/S0022-0248(00)00714-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The radiative recombination of carriers in a two-dimensional electron gas (2DEG) in undoped and modulation-doped AlxGa1-xN/GaN heterostructures grown by metalorganic chemical vapor deposition is investigated at low temperature using photoluminescence measurements. Temperature-dependent Hall effect and Shubnikov-de Haas measurements, verify the formation of a high-quality 2DEG. Radiative recombination is observed between the 2DEC in quantum states at the hetero-interface and the holes in the flat-band region or bound to residual accepters both in undoped and top AlGaN layer is removed by reactive ion etching. In addition, the effect of the growth interruption time, laser excitation intensity, and doping conditions upon the photoluminescence is also described. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：362 / 367

页数：6

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