Structure and chemical order in sputtered epitaxial FePd(0 0 1) alloys

被引:31
|
作者
Caro, P
Cebollada, A
Briones, F
Toney, MF
机构
[1] CSIC, Ctr Nacl Microelect, IMM, PTM, Madrid 28760, Spain
[2] IBM Corp, Almaden Res Ctr, Div Res, San Jose, CA 95120 USA
关键词
chemical order; sputter epitaxy; alloys;
D O I
10.1016/S0022-0248(98)00036-0
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
We report the structure and chemical ordering in sputtered FePd(0 0 1) alloys with varying growth temperature and Pt buffer-layer thickness. Increasing the thickness of the Pt buffer layer induces a transition from growth of a cubic chemically disordered FePd phase to a tetragonally distorted chemically ordered alloy. This behavior correlates with the buffer-layer morphology, which is discontinuous for films thinner than 100 Angstrom, but becomes more uniform for Pt thicknesses above 150 Angstrom. Two distinct regimes are observed when varying the growth temperature. For temperatures 300 degrees C and below, there is no sign of chemical order, either along the surface normal or in the film plane, while for 400 degrees C and above, chemical ordering. increases linearly with the growth temperature. This behavior is in contrast to the growth temperature dependence observed in MBE grown FePt alloys, where long-range chemical order varies continuously with growth temperature. We explain this difference as due to different film growth mechanisms. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:426 / 434
页数:9
相关论文
共 50 条
  • [41] K0-KBAR0 MIXING IN NONLEADING ORDER IN 1/MC
    PIVOVAROV, AA
    JETP LETTERS, 1991, 53 (10) : 536 - 540
  • [42] Study on the structure of CGH with same diffraction efficiency of 0-order and 1-order
    Ren Jian-feng
    Guo Peiji
    Zhang Biao
    5TH INTERNATIONAL SYMPOSIUM ON ADVANCED OPTICAL MANUFACTURING AND TESTING TECHNOLOGIES: OPTICAL TEST AND MEASUREMENT TECHNOLOGY AND EQUIPMENT, 2010, 7656
  • [43] Interface structure of GaN on sapphire (0 0 0 1) studied by transmission electron microscope
    Onitsuka, Tsuyoshi
    Maruyama, Takahiro
    Akimoto, Katsuhiro
    Bando, Yoshio
    Journal of Crystal Growth, 189-190 : 295 - 300
  • [44] Structural and chemical investigation of epitaxial Pt/Co(10(1)over-bar0) interfaces and of metastable Pt/(Pt1-x-Cox)/Co(10(1)over-bar0) surface alloys
    Barbier, A
    Belkhou, R
    Ohresser, P
    Da Costa, V
    Guillot, C
    Carriere, B
    Deville, JP
    SURFACE SCIENCE, 1998, 414 (1-2) : 170 - 186
  • [45] Hetero-epitaxial growth of CoSi2 thin films on Si(1 0 0): Template effects and epitaxial orientations
    Technische Hochschule Darmstadt, Darmstadt, Germany
    J Cryst Growth, 3 (430-438):
  • [46] ELECTRONIC-STRUCTURE OF NIO(1 0 0) WITH ADSORBED NA
    ROGELET, T
    SODERHOLM, S
    QVARFORD, M
    SAINI, NL
    KARLSSON, UO
    LINDAU, I
    FLODSTROM, SA
    SOLID STATE COMMUNICATIONS, 1993, 85 (07) : 657 - 660
  • [47] Structure of Cr film epitaxially grown on MgO(0 0 1)
    Wang, Chong-Min
    Kaspar, Tiffany C.
    Shutthanandan, Vaithiyalingam
    Joly, Alan G.
    Kurtz, Richard J.
    ACTA MATERIALIA, 2011, 59 (11) : 4274 - 4282
  • [48] HYDROGEN INDUCED STRUCTURE CHANGES OF GAAS(1 0 0) SURFACES
    ALLINGER, T
    SCHAEFER, JA
    STUHLMANN, C
    BECKERS, U
    IBACH, H
    PHYSICA B-CONDENSED MATTER, 1991, 170 (1-4) : 481 - 486
  • [49] Composition, structure, and nanomechanical properties of DC-sputtered CrNx (0≤x≤1) thin films
    Wei, G
    Rar, A
    Barnard, JA
    THIN SOLID FILMS, 2001, 398 : 460 - 464
  • [50] Energetics and structure of ⟨0 0 1⟩ tilt grain boundaries in SiC
    Wojdyr, Marcin
    Khalil, Sarah
    Liu, Yun
    Szlufarska, Izabela
    MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING, 2010, 18 (07)