Shear dependent nonlinear vibration in a high quality factor single crystal silicon micromechanical resonator

被引:7
|
作者
Zhu, H. [1 ]
Shan, G. C. [2 ]
Shek, C. H. [2 ]
Lee, J. E. -Y. [1 ]
机构
[1] City Univ Hong Kong, Dept Elect Engn, Kowloon, Hong Kong, Peoples R China
[2] City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China
关键词
SIMULATION; SYSTEMS;
D O I
10.1063/1.4737213
中图分类号
O59 [应用物理学];
学科分类号
摘要
The frequency response of a single crystal silicon resonator under nonlinear vibration is investigated and related to the shear property of the material. The shear stress-strain relation of bulk silicon is studied using a first-principles approach. By incorporating the calculated shear property into a device-level model, our simulation closely predicts the frequency response of the device obtained by experiments and further captures the nonlinear features. These results indicate that the observed nonlinearity stems from the material's mechanical property. Given the high quality factor (Q) of the device reported here (similar to 2 x 10(6)), this makes it highly susceptible to such mechanical nonlinear effects. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4737213]
引用
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页数:4
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