Electrical Modeling and Characterization of Shield Differential Through-Silicon Vias

被引：58
|
作者：
Lu, Qijun [1 ]
Zhu, Zhangming [1 ]
Yang, Yintang [1 ]
Ding, Ruixue [1 ]
机构：
[1] Xidian Univ, Sch Microelect, Xian 710071, Peoples R China
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2015年 / 62卷 / 05期
基金：
中国国家自然科学基金;
关键词：
3-D integrated circuits (3-D ICs); even mode; odd mode; resistance-inductance-capacitance-conductance (RLCG) parameters; shield differential through-silicon vias (SDTSVs); SCATTERING PARAMETERS;
D O I：
10.1109/TED.2015.2410312
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An equivalent-circuit model of shield differential through-silicon vias (SDTSVs) in 3-D integrated circuits (3-D ICs) is proposed in this paper. The proposed model is verified using the 3-D full-wave field solver High Frequency Simulator Structure, showing that it is highly accurate up to 100 GHz. Furthermore, a full-wave extraction method for the resistance-inductance-capacitance-conductance (RLCG) parameters of SDTSVs is also proposed in this paper, which can be applied to all of differential transmission lines. It is shown that the results of the RLCG parameters obtained from the full-wave extraction method agree well with that from the analytical calculation up to 100 GHz, further validating the accuracy of the proposed model. Finally, using the proposed model, a deep analysis of electrical characteristics of SDTSVs is carried out to provide helpful design guidelines for them in future 3-D ICs.
引用
收藏
页码：1544 / 1552
页数：9
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