Hydrogenation effects on AlGaAs/GaAs heterojunction bipolar transistors

被引：0
|
作者：
Luo, B
Ip, K
Ren, F
Lee, KP
Abernathy, CR
Pearton, SJ
Mackenzie, KD
机构：
[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA
[2] Agere Syst, Orlando, FL USA
[3] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[4] Unaxis USA Inc, St Petersburg, FL 33716 USA
来源：
SOLID-STATE ELECTRONICS | 2001年 / 45卷 / 10期
基金：
美国国家科学基金会;
关键词：
hydrogenation effect; AlGaAs/GaAs heterojunction bipolar transistor; I-V characteristics; exposure time; ion flux; ion energy;
D O I：
10.1016/S0038-1101(01)00244-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A comparison of the effects of H-2 and D-2 plasmas on the dc characteristics of AlGaAs/GaAs heterojunction bipolar transistors showed a strong influence of exposure time, ion flux and ion energy on the forward and reverse junction current-voltage (I-V) characteristics, base resistance and emitter-base junction breakdown voltage and ideality factor. The results are quite different than those observed with N-2 or Ar plasma exposure of similar devices and show that passivation of the carbon acceptors in the base layer is a major problem with processes such as plasma enhanced chemical vapor deposition of SiNx or SiO2 sidewall space layers during HBT fabrication. (C) 2001 Published by Elsevier Science Ltd.
引用
收藏
页码：1733 / 1741
页数：9
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