Enhanced thermoelectric performance of n-type bismuth selenide doped with nickel

被引:32
|
作者
Kulsi, Chiranjit [1 ]
Kargupta, Kajari [2 ]
Ganguly, Saibal [3 ]
Banerjee, Dipali [1 ]
机构
[1] Indian Inst Engn Sci & Technol, Dept Phys, Howrah 711103, W Bengal, India
[2] Jadavpur Univ, Dept Chem Engn, Kolkata 700032, W Bengal, India
[3] BITS Pilani, Dept Chem Engn, KK Birla Goa Campus,NH 17B Bypass Rd, Sancoale 403726, Goa, India
关键词
Bismuth selenide; Nickel doping; Power factor; Thermal conductivity; Figure of merit; TRANSPORT-PROPERTIES; BI2SE3; BI2TE3; SB2TE3; MICROSTRUCTURE;
D O I
10.1016/j.cap.2017.09.004
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Bismuth selenide (Bi2Se3) and transition metal (nickel) doped (5 and 7.5 mol %) Bi2Se3 have been prepared by solvothermal approach for investigation of thermoelectric properties of the materials. The morphological characterization reveals plate and flake like structures for undoped and doped samples respectively. There is a decrease in lattice constant, computed from Rietveld refinement data and crystallite size, found using Debye-Scherrer equation for doped samples. Doping by nickel increases the electrical conductivity and reduces both thermo power and thermal conductivity of the materials than pure Bi2Se3. Reduction in thermal conductivity of the doped samples by 42%, results in an increase in figure of merit (ZT) of nickel doped (5%) materials by one order of magnitude (0.02-0.22) compared to pure Bi2Se3. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码:1609 / 1615
页数:7
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