Synthesis and characterization of the ternary compounds Cu2GeSe3 and Cu2GeTe3

被引:0
|
作者
Villarreal, MA
Fernández, BJ
Pirela, M
Velásquez-Velásquez, A
Mora, AJ
Delgado, GE
机构
[1] Univ Andes, Fac Ciencias, Dept Fis, Ctr Estudio Semicond,Lab Temp Bajas, La Hechicera Merida 5251, Venezuela
[2] Univ Los Andes, Fac Ciencias, Dept Quim, Lab Cristallog, Merida 5251, Venezuela
关键词
semiconductors; thermal analysis; X-ray powder diffraction;
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
This work reports the synthesis and characterization of the ternary compounds Cu2GeSe3 and Cu2GeTe3. Both samples were synthesized by using the direct fusion technique. The chemical analysis (EDX) confirmed the 2:13 stoichiometric ratio for both compounds. The thermal differential analysis (ATD) showed the existence of a single phase for Cu2GeSe3 that melts at 765 degreesC, and a principal phase for Cu2GeTe3 that melts at 504 degreesC. In the last compound, a second transition at 357 degreesC is also observed but with a peak area of less than 5% of total area, approximately. The X-ray powder diffraction analysis indicated that both compounds crystallize in the orthorhombic space group Imm2, with unit cell parameters: a = 11.8616(3) Angstrom, b = 3,9525(1) Angstrom, c = 5.4879(1) Angstrom, V = 257.29(1) Angstrom(3) for Cu2GeSe3, and a = 12.6406(6) Angstrom, b = 4.2115(2) Angstrom, c = 5.9261(2) Angstrom, V= 315.48(2) Angstrom(3) for Cu2GeTe3.
引用
收藏
页码:198 / 200
页数:3
相关论文
共 50 条
  • [41] Variable-range hopping conductivity and magnetoresistance in p-type Cu2GeSe3
    Marcano, G
    Márquez, R
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2003, 64 (9-10) : 1725 - 1727
  • [42] Synthesis and characterization of the ternary compound Ag2GeSe3
    Velásquez-Velásquez, A
    Belandria, E
    Fernandez, BJ
    Godoy, RA
    Delgado, G
    Acosta-Najarro, GD
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2000, 220 (01): : 683 - 686
  • [43] Quasi-Ternary System Cu2Se-GeSe2-As2Se3
    O. Klymovych
    I. Ivashchenko
    I. Olekseyuk
    O. Zmiy
    Z. Lavrynyuk
    Journal of Phase Equilibria and Diffusion, 2020, 41 : 157 - 163
  • [44] Quasi-Ternary System Cu2Se-GeSe2-As2Se3
    Klymovych, O.
    Ivashchenko, I.
    Olekseyuk, I
    Zmiy, O.
    Lavrynyuk, Z.
    JOURNAL OF PHASE EQUILIBRIA AND DIFFUSION, 2020, 41 (02) : 157 - 163
  • [45] Enhancement of the Thermoelectric Performance of Cu2GeSe3 via Isoelectronic (Ag, S)-co-substitution
    Hu, Zeqing
    Xu, Huihong
    Yan, Chen
    Liu, Yu
    Han, Qinghua
    Cheng, Longjiu
    Li, Zhou
    Song, Jiming
    ACS APPLIED MATERIALS & INTERFACES, 2022, 14 (18) : 20972 - 20980
  • [46] Enhanced Thermoelectric Performance and Low Thermal Conductivity in Cu2GeTe3 with Identified Localized Symmetry Breakdown
    Qin, Feiyu
    Hu, Lei
    Zhu, Yingcai
    Li, Yushan
    Wang, Haitao
    Wu, Haijun
    Peng, Jun
    Shi, Wen
    Aydemir, Umut
    Ding, Xiangdong
    INORGANIC CHEMISTRY, 2023, 62 (19) : 7273 - 7282
  • [47] Phase-Change Memory using Cu2GeTe3 and Multiple Writing Technique for Neuromorphic Systems
    Akane, Shihori
    Horiuchi, Isao
    Hiroshima, Yasushi
    Nakashima, Yasuhiko
    Kimura, M.
    2023 IEEE INTERNATIONAL CONFERENCE ON CONSUMER ELECTRONICS, ICCE, 2023,
  • [48] Crystallographic and optical properties of narrow band gap Cu2GeSe3 and Cu2(Sn1-xGex)Se3 solid solution
    Morihama, Masaru
    Maeda, Tsuyoshi
    Yamauchi, Issei
    Wada, Takahiro
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (05)
  • [49] Temperature induced band gap shrinkage in Cu2GeSe3: Role of electron-phonon interaction
    Sarkar, Bimal Kumar
    Verma, Ajay Singh
    Deviprasad, P. S.
    PHYSICA B-CONDENSED MATTER, 2011, 406 (14) : 2847 - 2850
  • [50] CuGaSe2-Cu2GeSe3 section of the quasiternary Cu2Se-Ga2Se3-GeSe2 system
    Olekseyuk, ID
    Strok, OM
    Zmiy, OF
    POLISH JOURNAL OF CHEMISTRY, 1997, 71 (11) : 1532 - 1536