Preparation, Structure and Functional Properties of MoS2 and WS2 Nanocomposites with Inorganic Chalcogenide Semiconductors: a Review

被引:8
|
作者
Lampeka, Ya. D. [1 ]
Tsymbal, L. V. [1 ]
机构
[1] Natl Acad Sci Ukraine, LV Pysarzhevsky Inst Phys Chem, Prospekt Nauky 31, UA-03028 Kiev, Ukraine
关键词
composite materials; layered substances; molybdenum(IV) dichalcogenide; tungsten(IV) dichalcogenide; cadmium sulfide; inorganic chalcogenide semiconductors; PHOTOCATALYTIC H-2 EVOLUTION; HYDROGEN EVOLUTION; QUANTUM DOTS; EFFICIENT PHOTOCATALYST; EPITAXIAL-GROWTH; MOLYBDENUM-DISULFIDE; ENERGY-TRANSFER; DECORATED MOS2; CDS NANORODS; NANOSHEETS;
D O I
10.1007/s11237-017-9519-5
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Methods of preparation, crystal structure, morphology, electronic characteristics, and functional properties of composites formed by nanoparticles of inorganic chalcogenide semiconductors and nanosheets of layered MoS2 and WS2 are analyzed. Promise has been shown for the use of such nanomaterials in photo- and electrocatalysis as well as in the design of various new electronic devices.
引用
收藏
页码:211 / 234
页数:24
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