Preparation, Structure and Functional Properties of MoS2 and WS2 Nanocomposites with Inorganic Chalcogenide Semiconductors: a Review

被引:8
|
作者
Lampeka, Ya. D. [1 ]
Tsymbal, L. V. [1 ]
机构
[1] Natl Acad Sci Ukraine, LV Pysarzhevsky Inst Phys Chem, Prospekt Nauky 31, UA-03028 Kiev, Ukraine
关键词
composite materials; layered substances; molybdenum(IV) dichalcogenide; tungsten(IV) dichalcogenide; cadmium sulfide; inorganic chalcogenide semiconductors; PHOTOCATALYTIC H-2 EVOLUTION; HYDROGEN EVOLUTION; QUANTUM DOTS; EFFICIENT PHOTOCATALYST; EPITAXIAL-GROWTH; MOLYBDENUM-DISULFIDE; ENERGY-TRANSFER; DECORATED MOS2; CDS NANORODS; NANOSHEETS;
D O I
10.1007/s11237-017-9519-5
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Methods of preparation, crystal structure, morphology, electronic characteristics, and functional properties of composites formed by nanoparticles of inorganic chalcogenide semiconductors and nanosheets of layered MoS2 and WS2 are analyzed. Promise has been shown for the use of such nanomaterials in photo- and electrocatalysis as well as in the design of various new electronic devices.
引用
收藏
页码:211 / 234
页数:24
相关论文
共 50 条
  • [1] Preparation, Structure and Functional Properties of MoS2 and WS2 Nanocomposites with Inorganic Chalcogenide Semiconductors: a Review
    Ya. D. Lampeka
    L. V. Tsymbal
    Theoretical and Experimental Chemistry, 2017, 53 : 211 - 234
  • [2] Strain engineering in monolayer WS2, MoS2, and the WS2/MoS2 heterostructure
    He, Xin
    Li, Hai
    Zhu, Zhiyong
    Dai, Zhenyu
    Yang, Yang
    Yang, Peng
    Zhang, Qiang
    Li, Peng
    Schwingenschlogl, Udo
    Zhang, Xixiang
    APPLIED PHYSICS LETTERS, 2016, 109 (17)
  • [3] Preparation of WS2/MoS2/C Composite Films and their Tribological Properties
    Zhou Lei
    Yin Gui-lin
    Wang Yu-dong
    Yu Zhen
    He Dan-nong
    MULTI-FUNCTIONAL MATERIALS AND STRUCTURES II, PTS 1 AND 2, 2009, 79-82 : 711 - +
  • [4] Influence of shear strain on the electronic properties of monolayers MoS2, WS2, and MoS2/WS2 vdW heterostructure
    Yimin Sun
    Journal of Molecular Modeling, 2024, 30
  • [5] Influence of shear strain on the electronic properties of monolayers MoS2, WS2, and MoS2/WS2 vdW heterostructure
    Sun, Yimin
    JOURNAL OF MOLECULAR MODELING, 2024, 30 (04)
  • [6] Structural and electronic properties of MoS2, WS2, and WS2/MoS2 heterostructures encapsulated with hexagonal boron nitride monolayers
    Yelgel, C.
    Yelgel, O. C.
    Gulseren, O.
    JOURNAL OF APPLIED PHYSICS, 2017, 122 (06)
  • [7] Enhancing excitons by oleic acid treatment in WS2, MoS2, and WS2/MoS2 heterostructure
    Wang, Yishu
    Zhai, Xiaokun
    Feng, Liefeng
    Gao, Tingge
    APPLIED PHYSICS EXPRESS, 2022, 15 (02)
  • [8] THE STRUCTURE CHARACTERIZATION OF MOS2 AND WS2 CATALYSTS BY HREM
    PEDRAZA, F
    CRUZREYES, J
    ACOSTA, D
    YANEZ, MJ
    AVALOSBORJA, M
    FUENTES, S
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1993, 5 : A219 - A220
  • [9] Optoelectronic properties of defective MoS2 and WS2 monolayers
    Salehi, Saboura
    Saffarzadeh, Alireza
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2018, 121 : 172 - 176
  • [10] Sputtering and Electron Beam Irradiation of WS2/MoS2 and MoS2/WS2 Heterostructures for Enhanced Photoresponsivity
    Kim, Bong Ho
    Kwon, Soon Hyeong
    Yoon, Hongji
    Kim, Dong Wook
    Yoon, Young Joon
    IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2019, 18 : 1200 - 1203