A protocol for the verification of acid generation in 157 nm lithography

被引:27
|
作者
Scaiano, JC [1 ]
Laferriere, M
Ivan, MG
Taylor, GN
机构
[1] Univ Ottawa, Dept Chem, Ottawa, ON K1N 6N5, Canada
[2] Shipley Co Inc, Res & Dev Labs, Marlborough, MA 01752 USA
关键词
D O I
10.1021/ma034397d
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
引用
收藏
页码:6692 / 6694
页数:3
相关论文
共 50 条
  • [31] Current trends in 157 nm dry lithography
    Cefalas, AC
    APPLIED SURFACE SCIENCE, 2005, 247 (1-4) : 577 - 583
  • [32] Fluoropolymer resists for 157-nm lithography
    Toriumi, M
    Shida, N
    Watanabe, H
    Yamazaki, T
    Ishikawa, S
    Itani, T
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XIX, PTS 1 AND 2, 2002, 4690 : 191 - 199
  • [33] High transparency resists for 157 nm lithography
    Itani, T
    Ishikawa, S
    Irie, S
    Hagiwara, T
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (06): : 3181 - 3185
  • [34] SVG 157nm lithography approach
    McClay, J
    DeMarco, M
    Fahey, T
    Hansen, M
    Tirri, B
    OPTICAL MICROLITHOGRAPHY XIII, PTS 1 AND 2, 2000, 4000 : 1582 - 1589
  • [35] Development of polymer membranes for 157 nm lithography
    Eschbach, F
    Tregub, A
    Orvek, K
    Foster, C
    Lo, FC
    Matsukura, I
    Tsushima, N
    OPTICAL MICROLITHOGRAPHY XVII, PTS 1-3, 2004, 5377 : 1627 - 1640
  • [36] Synthesis of fluorinated materials for 193-nm immersion lithography and 157-nm lithography
    Yamashita, T
    Ishikawa, T
    Yoshida, T
    Hayamai, I
    Araki, T
    Aoyama, H
    Hagiwara, T
    Itani, T
    Fujii, K
    Advances in Resist Technology and Processing XXII, Pt 1 and 2, 2005, 5753 : 564 - 571
  • [37] 157nm lithography for 70nm technology node
    Itani, T
    MICROPROCESSES AND NANOTECHNOLOGY 2001, DIGEST OF PAPERS, 2001, : 306 - 307
  • [38] Fabrication of 65-nm holes for 157-nm lithography
    Kawaguchi, Etsuro
    Watanabe, Kunio
    Kurose, Eiji
    Furukawa, Takamitsu
    Itani, Toshiro
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2004, 43 (6 B): : 3668 - 3671
  • [39] Fabrication of 65-nm holes for 157-nm lithography
    Kawaguchi, E
    Watanabe, K
    Kurose, E
    Furukawa, T
    Itani, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2004, 43 (6B): : 3668 - 3671
  • [40] 157 nm Micrascan VII initial lithography results
    Sewell, H
    Tirri, B
    O'Neil, T
    Fahey, T
    McCafferty, D
    Reid, P
    McClay, J
    OPTICAL MICROLITHOGRAPHY XVI, PTS 1-3, 2003, 5040 : 629 - 639