A protocol for the verification of acid generation in 157 nm lithography

被引:27
|
作者
Scaiano, JC [1 ]
Laferriere, M
Ivan, MG
Taylor, GN
机构
[1] Univ Ottawa, Dept Chem, Ottawa, ON K1N 6N5, Canada
[2] Shipley Co Inc, Res & Dev Labs, Marlborough, MA 01752 USA
关键词
D O I
10.1021/ma034397d
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
引用
收藏
页码:6692 / 6694
页数:3
相关论文
共 50 条
  • [1] Optimized acid release underlayers for 157 nm lithography
    Larson, CE
    Wallraff, GM
    Johnson, L
    Brock, P
    Sundberg, L
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XXI, PTS 1 AND 2, 2004, 5376 : 1174 - 1180
  • [2] Lithography with 157 nm lasers
    Bloomstein, TM
    Horn, MW
    Rothschild, M
    Kunz, RR
    Palmacci, ST
    Goodman, RB
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (06): : 2112 - 2116
  • [3] Immersion lithography at 157 nm
    Switkes, M
    Rothschild, M
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (06): : 2353 - 2356
  • [4] 157-nm lithography
    不详
    IEEE MICRO, 2001, 21 (04) : 11 - 11
  • [5] Interference lithography at 157 nm
    Switkes, M
    Bloomstein, TM
    Rothschild, M
    OPTICAL MICROLITHOGRAPHY XIII, PTS 1 AND 2, 2000, 4000 : 1590 - 1593
  • [6] Transparent resins for 157 nm lithography
    Dammel, RR
    Sakamuri, R
    Romano, A
    Vicari, R
    Hacker, C
    Conley, W
    Miller, D
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVIII, PTS 1 AND 2, 2001, 4345 : 350 - 360
  • [7] Lithography at 157 nm gains momentum
    Wallace, J
    LASER FOCUS WORLD, 1999, 35 (08): : 139 - 142
  • [8] Optical lithography aims for 157 nm
    Anberg, D
    Flack, W
    PHOTONICS SPECTRA, 2000, 34 (12) : 74 - +
  • [9] Liquid immersion lithography at 157 nm
    Hagiwara, T
    Ishimaru, T
    Tsuji, S
    Fujii, K
    Itakura, Y
    Wakabayashi, O
    Kawasa, Y
    Egawa, K
    Uchino, I
    Sumitani, A
    Saito, Y
    Maeda, K
    Optical Microlithography XVIII, Pts 1-3, 2005, 5754 : 435 - 446
  • [10] Semiconductor lithography stumbles at 157 nm
    Gawel, R
    ELECTRONIC DESIGN, 2001, 49 (17) : 29 - 30