Response to "Comment on 'A model of hole trapping in SiO2 films on silicon'" [J. Appl. Phys. 83, 5591 (1998)]

被引：4

作者：

Lenahan, PM ^{[1
]}

Conley, JF

机构：

[1] Penn State Univ, University Pk, PA 16802 USA

[2] Dynam Res Corp, Beaverton, OR 97006 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 83卷 / 10期

关键词：

D O I：

10.1063/1.367499

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5593 / 5594

页数：2

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