RC delay reduction of 0.18μm CMOS technology using low dielectric constant fluorinated amorphous carbon

被引：4

作者：

Matsubara, Y ^{[1
]}

Kishimoto, K ^{[1
]}

Endo, K ^{[1
]}

Iguchi, M ^{[1
]}

Tatsumi, T ^{[1
]}

Gomi, H ^{[1
]}

Horiuchi, T ^{[1
]}

Tzou, E ^{[1
]}

Xi, M ^{[1
]}

Cheng, LY ^{[1
]}

Tribula, D ^{[1
]}

Moghadam, F ^{[1
]}

机构：

[1] NEC Corp Ltd, Sagamihara, Kanagawa 2291198, Japan

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年

关键词：

D O I：

10.1109/IEDM.1998.746486

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A low-k fluorinated amorphous carbon (a-C:F: dielectric constant 2.5) film as inter-metal dielectric (IMD) has been successfully integrated in 0.18-mu m CMOS technology. The RC delay of a ring oscillator with loaded wiring(length: 10mm) is reduced by 22% using an a-C:F IMD compared with that using a SiO2 IMD. The thermal stability problems from integrating a-C:F IMD with a W plug (deposition temperature. 370 degrees C, film stress: 1.5x10(10)dyne/cm(2)) can be overcome by using post a-C:F deposition anneal. This leads to less a-C:F outgassing at temperatures up to 375 degrees C.

引用

页码：841 / 844

页数：4

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