RC delay reduction of 0.18μm CMOS technology using low dielectric constant fluorinated amorphous carbon

被引：4

作者：

Matsubara, Y ^{[1
]}

Kishimoto, K ^{[1
]}

Endo, K ^{[1
]}

Iguchi, M ^{[1
]}

Tatsumi, T ^{[1
]}

Gomi, H ^{[1
]}

Horiuchi, T ^{[1
]}

Tzou, E ^{[1
]}

Xi, M ^{[1
]}

Cheng, LY ^{[1
]}

Tribula, D ^{[1
]}

Moghadam, F ^{[1
]}

机构：

[1] NEC Corp Ltd, Sagamihara, Kanagawa 2291198, Japan

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年

关键词：

D O I：

10.1109/IEDM.1998.746486

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A low-k fluorinated amorphous carbon (a-C:F: dielectric constant 2.5) film as inter-metal dielectric (IMD) has been successfully integrated in 0.18-mu m CMOS technology. The RC delay of a ring oscillator with loaded wiring(length: 10mm) is reduced by 22% using an a-C:F IMD compared with that using a SiO2 IMD. The thermal stability problems from integrating a-C:F IMD with a W plug (deposition temperature. 370 degrees C, film stress: 1.5x10(10)dyne/cm(2)) can be overcome by using post a-C:F deposition anneal. This leads to less a-C:F outgassing at temperatures up to 375 degrees C.

引用

页码：841 / 844

页数：4

共 50 条

[1] Fluorinated amorphous carbon as a low-dielectric constant interlayer dielectric
Endo, K
MRS BULLETIN, 1997, 22 (10) : 55 - 58
[2] Fluorinated amorphous carbon as a low-dielectric-constant interlayer dielectric
MRS Bull, 10 (55-58):
[3] Fluorinated Amorphous Carbon as a Low-Dielectric-Constant Interlayer Dielectric
Kazuhiko Endo
MRS Bulletin, 1997, 22 : 55 - 58
[4] Copper damascene using low dielectric constant fluorinated amorphous carbon interlayer
Matsubara, Y
Endo, K
Iguchi, M
Ito, N
Aoyama, K
Tatsumi, T
Horiuchi, T
LOW-DIELECTRIC CONSTANT MATERIALS IV, 1998, 511 : 291 - 296
[5] Spectral Characterization of Amorphous Fluorinated Carbon Film with a Low Dielectric Constant
Ding, Shi-Jin
Wang, Peng-Fei
Zhang, Wei
Wang, Ji-Tao
Lee, Wei William
2001, Science Press (21):
[6] Spectral characterization of amorphous fluorinated carbon film with a low dielectric constant
Ding, Shi-Jin
Wang, Peng-Fei
Zhang, Wei
Wang, Ji-Tao
Lee, Wei-William
Guang Pu Xue Yu Guang Pu Fen Xi/Spectroscopy and Spectral Analysis, 2001, 21 (06):
[7] Spectral characterization of amorphous fluorinated carbon film with a low dielectric constant
Ding, SJ
Wang, PF
Zhang, W
Wang, JT
Wei, WL
SPECTROSCOPY AND SPECTRAL ANALYSIS, 2001, 21 (06) : 745 - 748
[8] Plasma deposition of low-dielectric-constant fluorinated amorphous carbon
Endo, K
Shinoda, K
Tatsumi, T
JOURNAL OF APPLIED PHYSICS, 1999, 86 (05) : 2739 - 2745
[9] Processing and characterization of fluorinated amorphous carbon low-dielectric-constant films
Chen, HJ
Chang, SY
Chiue, HC
Lai, WS
Lin, SJ
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2004, 151 (11) : F276 - F282
[10] Structural and electronic properties of low dielectric constant fluorinated amorphous carbon films
Ma, YJ
Yang, HN
Guo, J
Sathe, C
Agui, A
Nordgren, J
APPLIED PHYSICS LETTERS, 1998, 72 (25) : 3353 - 3355

← 1 2 3 4 5 →