Low-Power Memristor Based on Two-Dimensional Materials

被引:68
|
作者
Duan, Huan [1 ]
Cheng, Siqi [1 ]
Qin, Ling [1 ]
Zhang, Xuelian [1 ]
Xie, Bingyang [1 ]
Zhang, Yang [2 ,3 ]
Jie, Wenjing [1 ]
机构
[1] Sichuan Normal Univ, Coll Chem & Mat Sci, Chengdu 610066, Peoples R China
[2] Nankai Univ, Inst Modern Opt, Tianjin 300071, Peoples R China
[3] Nankai Univ, Tianjin Key Lab Microscale Opt Informat Sci & Tech, Tianjin 300071, Peoples R China
来源
JOURNAL OF PHYSICAL CHEMISTRY LETTERS | 2022年 / 13卷 / 31期
基金
中国国家自然科学基金;
关键词
MEMTRANSISTORS;
D O I
10.1021/acs.jpclett.2c01962
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The memristor is an excellent candidate for nonvolatile memory and neuromorphic computing. Recently, two-dimensional (2D) materials have been developed for use in memristors with high-performance resistive switching characteristics, such as high on/off ratios, low SET/RESET voltages, good retention and endurance, fast switching speed, and low power and energy consumption. Low-power memristors are highly desired for recent fast-speed and energy-efficient artificial neuromorphic networks. This Perspective focuses on the recent progress of low-power memristors based on 2D materials, providing a condensed overview of relevant developments in memristive performance, physical mechanism, material modification, and device assembly as well as potential applications. The detailed research status of memristors has been reviewed based on different 2D materials from insulating hexagonal boron nitride, semiconducting transition metal dichalcogenides, to some newly developed 2D materials. Furthermore, a brief summary introducing the perspectives and challenges is included, with the aim of providing an insightful guide for this research field.
引用
收藏
页码:7130 / 7138
页数:9
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