Study of internal electric fields in AlGaAs/GaAs two-dimensional electron gas heterostructures

被引：5
|
作者：
Zamora-Peredo, L
Guillen-Cervantes, A
Rivera-Alvarez, Z
López-López, M
Rodríguez-Vázquez, AG
Méndez-García, VH
机构：
[1] Univ Autonoma San Luis Potosi, Inst Invest Comun Opt, San Luis Potosi 78210, Mexico
[2] IPN, Ctr Invest & Estudios Avanzados, Dept Phys, Mexico City 07000, DF, Mexico
来源：
MICROELECTRONICS JOURNAL | 2003年 / 34卷 / 5-8期
关键词：
two-dimensional electron gas; modulation-doped GaAs/AlGaAs heterostructures; photoreflectance;
D O I：
10.1016/S0026-2692(03)00102-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Modulation-doped GaAs/AlGaAs heterostructures have been studied by photoreflectance spectroscopy. The spectra at room temperature show Franz-Keldysh oscillations associated to the substrate-buffer layer interface. The built-in electric field magnitude calculated from these oscillations is related with the two-dimensional electron gas (2DEG) mobility. In addition we observed two signals associated to the GaAs capping layer and to the 2DEG, respectively. (C) 2003 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：521 / 523
页数：3
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