Study of internal electric fields in AlGaAs/GaAs two-dimensional electron gas heterostructures

被引：5
|
作者：
Zamora-Peredo, L
Guillen-Cervantes, A
Rivera-Alvarez, Z
López-López, M
Rodríguez-Vázquez, AG
Méndez-García, VH
机构：
[1] Univ Autonoma San Luis Potosi, Inst Invest Comun Opt, San Luis Potosi 78210, Mexico
[2] IPN, Ctr Invest & Estudios Avanzados, Dept Phys, Mexico City 07000, DF, Mexico
来源：
MICROELECTRONICS JOURNAL | 2003年 / 34卷 / 5-8期
关键词：
two-dimensional electron gas; modulation-doped GaAs/AlGaAs heterostructures; photoreflectance;
D O I：
10.1016/S0026-2692(03)00102-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Modulation-doped GaAs/AlGaAs heterostructures have been studied by photoreflectance spectroscopy. The spectra at room temperature show Franz-Keldysh oscillations associated to the substrate-buffer layer interface. The built-in electric field magnitude calculated from these oscillations is related with the two-dimensional electron gas (2DEG) mobility. In addition we observed two signals associated to the GaAs capping layer and to the 2DEG, respectively. (C) 2003 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：521 / 523
页数：3
相关论文
共 50 条
  • [1] CURRENT OSCILLATIONS AT HIGH ELECTRICAL FIELDS IN THE TWO-DIMENSIONAL ELECTRON-GAS IN GAAS ALGAAS HETEROSTRUCTURES
    HENDRIKS, P
    STARING, AAM
    VANWELZENIS, RG
    WOLTER, JH
    PROST, W
    HEIME, K
    SCHLAPP, W
    WEIMANN, G
    APPLIED PHYSICS LETTERS, 1989, 54 (26) : 2668 - 2670
  • [2] MAGNETOPHONON RESONANCES OF THE TWO-DIMENSIONAL ELECTRON-GAS IN GAAS/ALGAAS HETEROSTRUCTURES
    ENGLERT, T
    TSUI, DC
    PORTAL, JC
    BEERENS, J
    GOSSARD, A
    SOLID STATE COMMUNICATIONS, 1982, 44 (08) : 1301 - 1304
  • [3] SUPERCONDUCTING CONTACTS TO A TWO-DIMENSIONAL ELECTRON GAS IN GaAs/AlGaAs-HETEROSTRUCTURES
    Lenssen, K. -M. H.
    Matters, M.
    Harmans, C. J. P. M.
    Mooij, J. E.
    Leys, M. R.
    van der Vleuten, W.
    Wolter, J. H.
    IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 1993, 3 (01) : 1961 - 1963
  • [4] Photoreflectance spectroscopy of AlGaAs/GaAs heterostructures with a two-dimensional electron gas system
    Méndez-García, VH
    Zamora, L
    Lastras-Martinez, A
    Saucedo, N
    Peña, R
    Guillén, A
    Rivera, Z
    Meléndez, M
    López, M
    Hernández, F
    Huerta, J
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (03): : 1238 - 1242
  • [5] Photoluminescence from two-dimensional electron gas in AlGaAs/GaAs heterojunctions under high electric fields
    Aoki, K
    PHYSICA B-CONDENSED MATTER, 1999, 272 (1-4) : 146 - 148
  • [6] DIMENSIONAL RESONANCE OF THE TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED GAAS/ALGAAS HETEROSTRUCTURES
    ALLEN, SJ
    STORMER, HL
    HWANG, JCM
    PHYSICAL REVIEW B, 1983, 28 (08) : 4875 - 4877
  • [7] Features of Creating Ohmic Contacts for GaAs/AlGaAs Heterostructures with a Two-Dimensional Electron Gas
    Kurochka S.P.
    Stepushkin M.V.
    Borisov V.I.
    Russian Microelectronics, 2017, 46 (8) : 600 - 607
  • [8] MOBILITY TRANSITION IN THE TWO-DIMENSIONAL ELECTRON-GAS IN GAAS-ALGAAS HETEROSTRUCTURES
    LIN, BJF
    TSUI, DC
    WEIMANN, G
    SOLID STATE COMMUNICATIONS, 1985, 56 (03) : 287 - 290
  • [9] ac ballistic transport in a two-dimensional electron gas measured in GaAs/AlGaAs heterostructures
    Kang, SM
    Burke, PJ
    Pfeiffer, LN
    West, KW
    PHYSICAL REVIEW B, 2005, 72 (16)
  • [10] Optical properties of the two-dimensional electron gas in the N-AlGaAs/GaAs heterostructures
    Mokerov, VG
    Fedorov, YV
    Guk, AV
    Khabarov, YV
    DOKLADY AKADEMII NAUK, 1996, 348 (05) : 608 - 610
12345