The photoluminescence of SiCN thin films prepared by C+ implantation into α-SiNx:H

被引：10
|
作者：
Liu, Yuzhen [1 ]
Zhang, Xia [1 ]
Chen, Chao [1 ]
Zhang, Guobin [2 ]
Xu, Pengshou [2 ]
Chen, Dapeng [3 ]
Dong, Lijun [3 ]
机构：
[1] Chinese Acad Sci, Grad Univ, Coll Phys Sci, Beijing 100049, Peoples R China
[2] Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230026, Peoples R China
[3] Chinese Acad Sci, Inst Microelect, Beijing 100010, Peoples R China
来源：
THIN SOLID FILMS | 2010年 / 518卷 / 15期
关键词：
C+ implantation; High-temperature annealing; X-ray photoelectron spectroscopy; Photoluminescence; DEPOSITION; XPS;
D O I：
10.1016/j.tsf.2010.01.028
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
SiCN thin films were prepared by high-dosage (2 x 10(17) cm(-2)) C+ ion implantation into alpha-SiNx:H films. The prepared films were then processed by thermal annealing for 2 h at 800 degrees C, 1000 degrees C and 1200 degrees C respectively. The composition and bond structure of SiCN were analyzed by X-ray photoemission spectroscopy, Auger electron spectroscopy, Raman spectroscopy and X-ray diffraction, and photoluminescence. Ternary structure with N bridging C and Si of the film annealed at 800 degrees C was found. The luminescent properties of SiCN have also been studied by synchrotron radiation at 20 K. Four emission bands were observed, corresponding to 2.95, 2.58, 2.29 and 2.12 eV at 20 K. respectively. In this paper, we report the experimental results and try to explain them. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：4363 / 4366
页数：4
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