1 MeV Au+ ion modification of Fe3O4-based epitaxial films

被引:0
|
作者
Kim-Ngan, N-T H. [1 ]
Mackova, A. [2 ,3 ]
Malinsky, P. [2 ,3 ]
机构
[1] Pedag Univ, Nanostruct Lab, Inst Phys, Podchorazych 2, PL-30084 Krakow, Poland
[2] Czech Acad Sci, Inst Nucl Phys, Vvi, Rez 25068, Czech Republic
[3] Univ JE Purkyne, Dept Phys, Fac Sci, Pasteurova 3632-15, Usti Nad Labem 40096, Czech Republic
关键词
thin films; ion beam modification of materials; ion beam analysis; MAGNETORESISTANCE;
D O I
10.1088/2043-6262/ac8796
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The effect of 1 MeV Au+ ion irradiations on the layer stability of the Fe3O4-based films grown epitaxially on MgO(001) substrates was investigated by Rutherford backscattering spectroscopy (RBS) and RBS-Channelling (RBS-C). The ion mixing effect leads to an appearance of the additional FeO (x) layer and a large enlargement of the thickness of the mixed (Fe,Mg,O) layer in the interfaces. Au+ ions were found to be implanted deeply in the MgO substrate. RBS-C experiments have confirmed that the heavy metallic ion irradiations induce a disorder in the crystalline lattice.
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页数:9
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