Surface roughness of silicon-nitride gate insulators deposited in a 40-MHz glow discharge

被引：3
|
作者：
Meiling, H
TenGrotenhuis, E
vanderWeg, WF
Hautala, JJ
Westendorp, JFM
机构：
来源：
AMORPHOUS SILICON TECHNOLOGY - 1996 | 1996年 / 420卷
关键词：
D O I：
10.1557/PROC-420-99
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The surface morphology of 40-MHz PECVD SiNx films is investigated. We report on the correlation between the deposition conditions, bulk properties, and surface roughness of these TFT insulators. The roughness is measured with atomic-force microscopy, AFM. A link will be presented between the AFM properties and the effects of hydrogen dilution during deposition: gas composition and rf-power-density (P) dependences will be discussed. An increase of the surface roughness to 3.7 nm is observed upon H-2 dilution and P increase, ascribed to enhanced ion bombardment of the surface during growth.
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页码：99 / 104
页数：6
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