Surface roughness of silicon-nitride gate insulators deposited in a 40-MHz glow discharge

被引：0
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作者：
Meiling, H
TenGrotenhuis, E
VanderWeg, WF
Hautala, JJ
Westendorp, JFM
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来源：
FLAT PANEL DISPLAY MATERIALS II | 1997年 / 424卷
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中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The surface morphology of 40-MHz PECVD SiNx films is investigated. We report on the correlation between the deposition conditions, bulk properties, and surface roughness of these TFT insulators. The roughness is measured with atomic-force microscopy, AFM. A link will be presented between the Am? properties and the effects of hydrogen dilution during deposition: gas composition and rf-power-density (P) dependences will be discussed. An increase of the surface roughness to 3.7 nm is observed upon H-2 dilution and P increase, ascribed to enhanced ion bombardment of the surface during growth.
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页码：19 / 24
页数：4
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