Engineering of hole-spin polarization in nanowires

被引:1
|
作者
Zuelicke, Ulrich [1 ,2 ,3 ,4 ]
Csontos, Dan [1 ]
机构
[1] Massey Univ, Inst Fundamental Sci, Palmerston North, New Zealand
[2] Massey Univ, MacDiarmid Inst Adv Mat & Nanotechnol, Palmerston North, New Zealand
[3] Univ Karlsruhe, Inst Theoret Festkorperphys, D-76128 Karlsruhe, Germany
[4] Univ Karlsruhe, DFG Ctr Funct Nanostruct CFN, D-76128 Karlsruhe, Germany
关键词
quantum-confined structures; tunable Zeeman effect; p-type semiconductor nanostructures;
D O I
10.1117/12.765230
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We present a theoretical study of Zeeman spin splitting for quasi-onedimensional valence-band edges in cylindrical nanowires subject to a magnetic field parallel to the wire direction. The interplay between quantum confinement and strong spin-orbit coupling in the valence band gives rise to a controllable large variation of the effective g-factor for single wire levels. A direct correspondence is established between values for hole g-factors and characteristic spin-polarization profiles for wire-level bound states. The correlation between hole spin splittings and polarizations is mapped over the range of spin-orbit coupling strengths present in typical semiconductor materials. We propose to use nanowire subband edges as a versatile laboratory for experimental and theoretical study of the complex spin properties exhibited by quantum-confined holes.
引用
收藏
页数:10
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