X-ray photoelectron spectroscopy study of junction interface in In/BaRbBiO films

被引:0
|
作者
Toda, F
Yamada, T
Kishida, S
Tokutaka, H
机构
[1] Oki Elect Ind Co Ltd, Hachioji, Tokyo 193, Japan
[2] Tottori Univ, Dept Elect & Elect Engn, Tottori 680, Japan
关键词
BRBO film; three-terminal device; X-ray photoelectron spectroscopy; chemical state analysis; superconductor; native barrier;
D O I
10.1143/JJAP.37.2482
中图分类号
O59 [应用物理学];
学科分类号
摘要
The In/BRBO/STO specimens were fabricated by depositing Ba0.6Rb0.4Bi1.0Oy (BRBO) on the SrTiO3 (STO) substrates by means of molecular beam epitaxy using 100% pure ozone and then, by depositing In metal. From the X-ray photoelectron spectroscopy results, we found that the In metal deposited on the BRBO/STO specimen removed the oxygen from BRBO and produced InOx layer at the interface between In metal and BRBO.
引用
收藏
页码:2482 / 2484
页数:3
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