X-ray photoelectron spectroscopy study of junction interface in In/BaRbBiO films

被引：0
|
作者：
Toda, F
Yamada, T
Kishida, S
Tokutaka, H
机构：
[1] Oki Elect Ind Co Ltd, Hachioji, Tokyo 193, Japan
[2] Tottori Univ, Dept Elect & Elect Engn, Tottori 680, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 5A期
关键词：
BRBO film; three-terminal device; X-ray photoelectron spectroscopy; chemical state analysis; superconductor; native barrier;
D O I：
10.1143/JJAP.37.2482
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The In/BRBO/STO specimens were fabricated by depositing Ba0.6Rb0.4Bi1.0Oy (BRBO) on the SrTiO3 (STO) substrates by means of molecular beam epitaxy using 100% pure ozone and then, by depositing In metal. From the X-ray photoelectron spectroscopy results, we found that the In metal deposited on the BRBO/STO specimen removed the oxygen from BRBO and produced InOx layer at the interface between In metal and BRBO.
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收藏
页码：2482 / 2484
页数：3
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