Deposition of CeO2 buffer layers for YBCO coated conductors on biaxially textured ni substrates by MOCVD technique

CeO2 buffer layers for YBa2Cu3O7(YBCO) coated conductors were deposited on biaxially textured Ni substrates by metalorganic chemical vapor deposition (MOCVD) method. The variables were the oxygen partial pressure (P-O2), deposition temperature and time: The (200) texture of CeO2 was formed at T = 500degreesC-520degreesC, t = 3-15 min and PO2 = 2.30 torr, while the (111) and (200) texture were competitively formed at other condition. The surface roughness of CeO2 films was as good as 5-15 nm up to 500 degreesC, while it rapidly increased as a result of grain growth of the CeO2 at T greater than or equal to 520 degreesC. The surface roughness of the CeO2 films also increased as the deposition time increased. The growth rate of the CeO2 films at T = 520 degreesC and P-O2 = 2.30 torr was 200 nm/min, which is much higher than those prepared by other physical deposition methods.