E-tunable magnetic susceptibility and reversible magnetization switching in YIG/Pt/PMN-PZT/Pt heterostructure by low electric and magnetic fields

被引:4
|
作者
Han, Liuyang [1 ,2 ,3 ]
Ponchel, Freddy [1 ]
Remiens, Denis [1 ]
Lasri, Tuami [1 ]
Tiercelin, Nicolas [1 ]
Wang, Genshui [2 ,3 ,4 ]
Pernod, Philippe [1 ]
机构
[1] Univ Polytech Hauts France, CNRS, Cent Lillem,LEMAC, ISEN,Univ Lille,UMR 8520,IEMN,Joint Int Lab LIA L, F-59000 Lille, France
[2] Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China
[3] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China
[4] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
关键词
COMPOSITES; BIAS;
D O I
10.1063/1.5114868
中图分类号
O59 [应用物理学];
学科分类号
摘要
The electric field (E) controlled magnetism in the multiferroic heterostructure comprising polycrystalline yttrium iron garnet (YIG) film, Pt electrodes, and lead magnesium niobate-lead zirconate titanate (PMN-PZT) ceramic is presented in this work. The electric-field-dependent magnetization and susceptibility of YIG film reveal the strain-mediated transformation of magnetocrystalline anisotropy. A strong converse magnetoelectric (CME) effect has been observed in the YIG/Pt/PMN-PZT/Pt heterostructure, and the CME coefficient can reach 17 x 10(-8) s/m at 0 Oe and 4.2 kV/cm. The reversible magnetization switching by means of a low voltage pulse (+/- 4.6 kV/cm) can be realized at 0 Oe in the YIG/Pt/PMN-PZT/Pt heterostructure, and the E-tunable susceptibility can reach Delta chi/chi(0+) = 55.5% at 20 Oe and 4 kV/cm. These results show great potential in power-efficient magnetoelectric components for information storage and tunable devices. Published under license by AIP Publishing.
引用
收藏
页数:6
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