Current Carriers Transport In High Uniaxially Strained Silicon

We present the tensoresistivity effects which demonstrate the pressure-induced increase of the mobility of electrons and holes at certain orientations of uniaxial pressure X with reference to the [100] crystallographic axis. The uniaxially strained channels occur in silicon n-MOS-transistors and p-MOS transistors [1,2]. Both longitudinal tensoresistivity (TR) and transverse TR investigation in high uniaxially strained n-Si(P) and p-Si(B) are presented.. In n-Si the change of the longitudinal TR and transverse TR at X parallel to [100] is determined by both the change of f-transition probability with increasing pressure and the redistribution of electrons between the valleys with the effective mass m(parallel to) (longitudinal TR) and m(perpendicular to) (transverse TR). It is shown that the strong anisotropy of longitudinal TR and transverse TR are caused by pressure-induced change of isoenergetic surface shape, i.e. by the change of heavy holes effective mass and its anisotropy.