A model of hot carrier gate current for uniaxially strained Si NMOSFET

被引：1
|
作者：
Lu Yi [1 ]
Zhang He-Ming [1 ]
Hu Hui-Yong [1 ]
Yang Jin-Yong [2 ]
机构：
[1] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China
[2] Beijing Res Inst Precise Mechatron Controls, Beijing 100076, Peoples R China
来源：
ACTA PHYSICA SINICA | 2014年 / 63卷 / 19期
基金：
高等学校博士学科点专项科研基金;
关键词：
uniaxially strained Si; gate current model; hot carrier; MOSFETS;
D O I：
10.7498/aps.63.197103
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Hot carrier gate current is one of the factors that influence the power and reliability of metal-oxide-semiconductor field effect transistor (MOSFET). Based on the physical process of generation of the hot carrier effect, a model of hot carrier gate current for uniaxially strained Si NMOSFET is developed. With that model, the simulation results of hot carrier gate current against stress intensity, gate-source bias, channel doping concentration, and drain-source bias are obtained and analyzed. The relationship between life time of time-dependent dielectric break down (TDDB) and gate-source bias is simulated and analyzed. Results show that the uniaxially strained Si MOSFET not only has smaller hot carrier gate current, but also has more stable reliability as compared with the strainless bulk device. Meanwhile, the simulation results match the experimental results very well, which validates the accuracy of the model.
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页数：7
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