We report on the fabrication of organic thin-film transistors (OTFTs) with a spun cross linked poly-4-vinylphenol (PVP) dielectric on a polyethersulphone (PES) flexible substrate. To improve the electrical performance of OTFTs, we employed a random single-walled carbon nanotubes (SWNTs) network as a carrier transfer underlay without sacrificing the flexibility of the TFTs. The random SWNTs showed that they can act as a semiconducting channel and conduction path to shorten the channel length in our TFTs. The flexible thin-film transistors (TFTs) with a random SWNTs/pentacene bilayer as an active channel exhibited an improved saturation field effect mobility (mu(sat)) of 2.6 x 10(-1) cm(2)/Vs compared to that of TFTs without the SWNTs underlay, while creating only a minor reduction of the current on/off ratio. (C) 2010 Elsevier B.V. All rights reserved.
ZHAO JianWenQIAN JunSHEN YongQiangWANG XiaoHuaSHI AiHua LEE ChunWei College of Chemistry and Chemical EngineeringJishou UniversityJishou China Printable Electronics Research CentreSuzhou Institute of Nanotech and NanobionicsChinese Academy of SciencesSuzhou China Key Laboratory of Photochemical Conversion and Optoelectronic MaterialsTIPCChinese Academy of SciencesBeijing China School of Materials Science and EngineeringNanyang Technological UniversitySingapore Singapore
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ZHAO JianWenQIAN JunSHEN YongQiangWANG XiaoHuaSHI AiHua LEE ChunWei College of Chemistry and Chemical EngineeringJishou UniversityJishou China Printable Electronics Research CentreSuzhou Institute of Nanotech and NanobionicsChinese Academy of SciencesSuzhou China Key Laboratory of Photochemical Conversion and Optoelectronic MaterialsTIPCChinese Academy of SciencesBeijing China School of Materials Science and EngineeringNanyang Technological UniversitySingapore Singapore
机构:Korea Elect Technol Inst, Informat Display Res Ctr, Gyeonggi 463816, South Korea
Kim, YH
Han, JI
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Korea Elect Technol Inst, Informat Display Res Ctr, Gyeonggi 463816, South KoreaKorea Elect Technol Inst, Informat Display Res Ctr, Gyeonggi 463816, South Korea
Han, JI
Moon, DG
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机构:Korea Elect Technol Inst, Informat Display Res Ctr, Gyeonggi 463816, South Korea
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Korea Univ, Coll Engn, Display & Nanosyst Lab, Seoul 136713, South KoreaKorea Univ, Coll Engn, Display & Nanosyst Lab, Seoul 136713, South Korea
Kwon, Jae-Hong
Shin, Sang-Il
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Korea Univ, Coll Engn, Display & Nanosyst Lab, Seoul 136713, South KoreaKorea Univ, Coll Engn, Display & Nanosyst Lab, Seoul 136713, South Korea
Shin, Sang-Il
Kim, Chang-Hoon
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Korea Univ, Coll Engn, Display & Nanosyst Lab, Seoul 136713, South KoreaKorea Univ, Coll Engn, Display & Nanosyst Lab, Seoul 136713, South Korea
Kim, Chang-Hoon
You, In-Kyu
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Convergence & Components & Mat Elect & Telecommun, Flexible Devices Team, Res Lab, Taejon 305700, South KoreaKorea Univ, Coll Engn, Display & Nanosyst Lab, Seoul 136713, South Korea
You, In-Kyu
Cho, Cyeong-Ik
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Convergence & Components & Mat Elect & Telecommun, Flexible Devices Team, Res Lab, Taejon 305700, South KoreaKorea Univ, Coll Engn, Display & Nanosyst Lab, Seoul 136713, South Korea