Numerical study of the effect of gas temperature on the time for onset of particle nucleation in argon-silane low-pressure plasmas

被引:57
|
作者
Bhandarkar, U [1 ]
Kortshagen, U [1 ]
Girshick, SL [1 ]
机构
[1] Univ Minnesota, Dept Mech Engn, Minneapolis, MN 55455 USA
关键词
D O I
10.1088/0022-3727/36/12/307
中图分类号
O59 [应用物理学];
学科分类号
摘要
Particle nucleation in silane plasmas has attracted interest for the past decade, both due to the basic problems of plasma chemistry involved and the importance of silane plasmas for many applications. A better understanding of particle nucleation may facilitate the avoidance of undesirable particle contamination as well as enable the controlled production of nanoparticles for novel applications. While understanding of particle nucleation has significantly advanced over the past years, a number of questions have not been resolved. Among these is the delay of particle nucleation with an increasing Gas temperature, which has been observed in experiments in argon-silane plasmas. We have developed a quasi-one-dimensional model to simulate particle nucleation and growth in silane containing plasmas. In this paper we present a comparative study of the various effects that have been proposed as explanations for the nucleation delay. Our results suggest that the temperature dependence of the Brownian diffusion coefficient is the most important effect, as diffusion affects both the loss rate and growth rate of particles.
引用
下载
收藏
页码:1399 / 1408
页数:10
相关论文
共 50 条
  • [1] Particle nucleation and growth in a low-pressure argon-silane discharge
    Boufendi, L.
    Bouchoule, A.
    PLASMA SOURCES SCIENCE & TECHNOLOGY, 1994, 3 (03): : 262 - 267
  • [2] Gas-phase nucleation in low-pressure silane plasmas
    Bhandarkar, UV
    Girshick, SL
    Swihart, MT
    Kortshagen, UR
    FUNDAMENTAL GAS-PHASE AND SURFACE CHEMISTRY OF VAPOR-PHASE DEPOSITION II AND PROCESS CONTROL, DIAGNOSTICS, AND MODELING IN SEMICONDUCTOR MANFACTURING IV, 2001, 2001 (13): : 481 - 487
  • [3] Numerical Modeling of an RF Argon-Silane Plasma with Dust Particle Nucleation and Growth
    Agarwal, Pulkit
    Girshick, Steven L.
    PLASMA CHEMISTRY AND PLASMA PROCESSING, 2014, 34 (03) : 489 - 503
  • [5] An experimental and numerical study of particle nucleation and growth during low-pressure thermal decomposition of silane
    Nijhawan, S
    McMurry, PH
    Swihart, MT
    Suh, SM
    Girshick, SL
    Campbell, SA
    Brockmann, JE
    JOURNAL OF AEROSOL SCIENCE, 2003, 34 (06) : 691 - 711
  • [6] MEASUREMENTS OF PARTICLE-SIZE KINETICS FROM NANOMETER TO MICROMETER SCALE IN A LOW-PRESSURE ARGON-SILANE RADIOFREQUENCY DISCHARGE
    BOUFENDI, L
    PLAIN, A
    BLONDEAU, JP
    BOUCHOULE, A
    LAURE, C
    TOOGOOD, M
    APPLIED PHYSICS LETTERS, 1992, 60 (02) : 169 - 171
  • [7] Influence of multipolar electrostatic and van der Waals forces on the coagulation of silicon nanoparticles in low-temperature argon-silane plasmas
    Santos, Benjamin
    Vidal, Francois
    PLASMA SOURCES SCIENCE & TECHNOLOGY, 2020, 29 (11):
  • [8] Crystallization of nanostructured silicon films deposited under a low-pressure argon-silane pulsed-glow discharge: Correlation with the plasma duration
    Hadjadj, A
    Beorchia, A
    Boufendi, L
    Huet, S
    Cabarrocas, PRI
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2001, 19 (01): : 124 - 129
  • [9] Using OES to determine electron temperature and density in low-pressure nitrogen and argon plasmas
    Zhu, Xi-Ming
    Pu, Yi-Kang
    PLASMA SOURCES SCIENCE & TECHNOLOGY, 2008, 17 (02):
  • [10] Partial-depth modulation study of anions and neutrals in low-pressure silane plasmas
    Courteille, C
    Dorier, JL
    Hollenstein, C
    Sansonnens, L
    Howling, AA
    PLASMA SOURCES SCIENCE & TECHNOLOGY, 1996, 5 (02): : 210 - 215