High Gain InAs Electron-Avalanche Photodiodes for Optical Communication

被引：0
|
作者：
Marshall, A. R. J. [1 ]
Vines, P. [1 ]
Xie, S. [1 ]
David, J. P. R. [1 ]
Tan, C. H. [1 ]
机构：
[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England
来源：
2010 22ND INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) | 2010年
关键词：
MULTIPLICATION NOISE; EXCESS NOISE; DEAD SPACE; DIODES;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the avalanche properties of InAs avalanche photodiodes (APDs), extracted from avalanche gain and excess noise measurements performed under pure electron and pure hole injections, and from Monte Carlo simulations. For a given avalanche width electron initiated gain was found to be significantly higher than conventional InP and Si APDs. Hole initiated multiplication was negligible confirming the electron only multiplication process within the field range covered. Excess noise measurements showed the excess noise factors of less than 2, providing further evidence of the ideal avalanche properties in InAs. Monte Carlo simulations performed provided good agreement to experimental results.
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页数：4
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