ROOM-TEMPERATURE FABRICATION OF HIGHLY TRANSPARENT CONDUCTIVE ALUMINUM-DOPED ZINC OXIDE FILMS

被引：0
|
作者：
Chen, C. H. [1 ]
Chen, Y. C. [1 ]
Hong, S. F. [1 ]
Wang, C. L. [1 ]
Shih, W. C. [1 ]
Tsai, C. P. [1 ]
Wu, Y. C. [1 ]
Lai, C. H. [1 ]
Wei, C. N. [2 ]
Bo, H. Y. [2 ]
机构：
[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan
[2] Chung Shan Inst Sci & Technol, MEOR, Taoyuan, Taiwan
来源：
35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE | 2010年
关键词：
OPTICAL-PROPERTIES; SOLAR-CELL; MAGNETRON; DEPENDENCE; GROWTH;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Room temperature fabricated aluminum-doped zinc oxide (ZnO:Al) films were deposited by radio-frequency magnetron sputtering under pure Ar ambient. By investigating and controlling the sputtering parameters, such as relative position between target and substrate, and working pressure, high quality ZnO: Al films were obtained. Even without substrate heating during deposition or post annealing process, we were able to fabricate ZnO: Al films on glass and polymer substrate with resistivity in the order of magnitude of 1 x 10(-4) ohm-cm and average transmittance over 90% in the visible light region. This indicates that such room temperature fabrication process could obtain high quality ZnO: Al films without thermal degradation and suitable for the application of flexible electronics on temperature sensitive polymer substrates.
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