ROOM-TEMPERATURE FABRICATION OF HIGHLY TRANSPARENT CONDUCTIVE ALUMINUM-DOPED ZINC OXIDE FILMS

被引：0

作者：

Chen, C. H. ^{[1
]}

Chen, Y. C. ^{[1
]}

Hong, S. F. ^{[1
]}

Wang, C. L. ^{[1
]}

Shih, W. C. ^{[1
]}

Tsai, C. P. ^{[1
]}

Wu, Y. C. ^{[1
]}

Lai, C. H. ^{[1
]}

Wei, C. N. ^{[2
]}

Bo, H. Y. ^{[2
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan

[2] Chung Shan Inst Sci & Technol, MEOR, Taoyuan, Taiwan

来源：

35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE | 2010年

关键词：

OPTICAL-PROPERTIES; SOLAR-CELL; MAGNETRON; DEPENDENCE; GROWTH;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Room temperature fabricated aluminum-doped zinc oxide (ZnO:Al) films were deposited by radio-frequency magnetron sputtering under pure Ar ambient. By investigating and controlling the sputtering parameters, such as relative position between target and substrate, and working pressure, high quality ZnO: Al films were obtained. Even without substrate heating during deposition or post annealing process, we were able to fabricate ZnO: Al films on glass and polymer substrate with resistivity in the order of magnitude of 1 x 10(-4) ohm-cm and average transmittance over 90% in the visible light region. This indicates that such room temperature fabrication process could obtain high quality ZnO: Al films without thermal degradation and suitable for the application of flexible electronics on temperature sensitive polymer substrates.

引用

页数：1

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