Model for electrical simulation of photogate active pixel sensor

被引：0
|
作者：
Casadei, B [1 ]
Hu, Y
Dufaza, C
Martin, L
机构：
[1] L2MP Polytech Marseille, Marseille, France
[2] ST Microelect Rousset, Rousst, France
来源：
16TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, PROCEEDINGS | 2004年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new electrical simulation model for photogate active pixel sensor in CMOS imagers is proposed Review of three conventional models is done and shows lack of accuracy. Therefore photoelectric mechanisms and charges transfer of photogate pixel are analysed and lead to the definition of a Verilog-A description model. This model is then simulated into the Cadence design tool environment and simulation results show great improvements in simulation accuracy of the proposed model versus others ones.
引用
收藏
页码：189 / 193
页数：5
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