Macromodel for CMOS photogate-type active pixel sensors

被引：1

作者：

Ponce-Ponce, VH ^{[1
]}

Gomez-Castañeda, F ^{[1
]}

Moreno-Cadenas, JA ^{[1
]}

Nava, LMF ^{[1
]}

机构：

[1] IPN, Interdisciplinary Sch Engn & Adv Studies, UPIITA, Mexico City 07738, DF, Mexico

来源：

2005 2nd International Conference on Electrical & Electronics Engineering (ICEEE) | 2005年

关键词：

active pixel; CMOS; photogate; PSpice;

D O I：

10.1109/ICEEE.2005.1529615

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Photogate-type pixels are structures widely used in the design of modern CMOS integrated cameras, but also in real-time CMOS vision sensory system applications. This work introduces a PSpice macromodel for CMOS photogate-type active pixel sensors that can be used for electrical simulation. The aim of this work is to introduce a PSpice macromodel due to the lack of macromodels reported in the literature. Simulation results as well as measurements of a test photogate-type active pixel sensor, fabricated in a standard CMOS process, using 1.2 microns design rules are presented.

引用

页码：231 / 234

页数：4

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